Research and Markets - Global GaN Radio Frequency Devices Market CAGR Growth of 18.94% by 2020 - Trends, Technologies & Opportunities Report 2016-2020 - Vendors: MACOM, Toshiba, WIN Semiconductors

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Oct 25, 2016, 12:10 ET

DUBLIN, October 25, 2016 /PRNewswire/ --

Research and Markets has announced the addition of the "Global GaN Radio Frequency Devices Market 2016-2020" report to their offering.

The global GaN radio frequency (RF) devices market is forecast to grow at a CAGR of 18.94% during the period 2016-2020.

Commenting on the report, an analyst from the research team said: that proliferation of IoT is one of the trends spurring growth for the market. IoT enables devices to collect data using actuators and sensors and transmit data to a centralized location on a real-time basis, which empowers the user to take an informed decision.

Sensors and MEMS are an integral part of IoT devices and are manufactured from 200 mm wafer. It is estimated a total of one trillion sensors will be produced in 2020 to support the demand for IoT devices. The growing applications of IoT will have a high impact on semiconductor device manufacturers.

Wireless communication technologies driving IoT connectivity include Wi-Fi, Bluetooth, and ZigBee, with Ethernet also having a role to play. Thus, the adoption of IoT is increasing in a number of market segments such as consumer electronics, automotive, and medical, which is expected to auger well for the growth of the market during the forecast period.

According to the report, emerging companies focusing on gallium-based compounds is a key driver aiding to the growth of this market. The silicon-based RF power semiconductor market is dominated by vendors such as Infineon Technologies and NXP Semiconductor.

As a result of the domination of these global players in the semiconductor market, emerging companies such as MACOM are focusing more on GaN technology for RF power semiconductor devices. Though the gallium-based high-power RF semiconductor market is still in the nascent stage, commercialization is taking place.

The benefits of GaN include wide bandgap and higher power, energy, and speeds in reaching higher energy states. In addition, the market hold of the leading vendors of the silicon-based RF power devices is not strong enough to prevent emerging companies from developing and using new technologies.

Questions Answered:

What will the market size be in 2020 and what will the growth rate be?
What are the key market trends?
What is driving this market?
What are the challenges to market growth?
Who are the key vendors in this market space?
What are the market opportunities and threats faced by the key vendors?
What are the strengths and weaknesses of the key vendors?

Companies Mentioned:

GAN Systems
Infineon Technologies
NXP Semiconductors
Qorvo
Wolfspeed
Ampleon Netherlands B.V.
Avago Technologies
Efficient Power Conversion (EPC)
Fujitsu Semiconductor
INTEGRA Technologies
MACOM
Microsemi
Northrop Grumman
NTT Advanced Technology Corporation
RFHIC
Sumitomo Electric Device Innovations
ST-Ericsson
Texas Instruments
Toshiba
United Monolithic Semiconductors (UMS)
WIN Semiconductors

Report Structure:

PART 01: Executive summary

PART 02: Scope of the report

PART 03: Market research methodology

PART 04: Introduction

PART 05: Technology landscape

PART 06: Market landscape

PART 07: Market segmentation by sector application

PART 08: Geographical segmentation

PART 09: Market drivers

PART 10: Impact of drivers

PART 11: Market challenges

PART 12: Impact of drivers and challenges

PART 13: Market trends

PART 14: Vendor landscape

PART 15: About the Author

For more information about this report visit http://www.researchandmarkets.com/research/tcvqnv/global_gan_radio

Media Contact:

Research and Markets
Laura Wood, Senior Manager
[email protected]

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SOURCE Research and Markets