Reportlinker Adds Advanced Solid-state Memory Systems And Products: Emerging Non-volatile Memory Technologies, Industry Trends And Market Analysis

NEW YORK, April 28, 2011 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue:

Advanced Solid-state Memory Systems And Products: Emerging Non-volatile Memory Technologies, Industry Trends And Market Analysis

http://www.reportlinker.com/p0487565/Advanced-Solid-state-Memory-Systems-And-Products-Emerging-Non-volatile-Memory-Technologies-Industry-Trends-And-Market-Analysis.html

The ideal semiconductor memory for future silicon integrated circuits unifies the qualities of the different memory technologies of today. It should have the high speed of static random access memory (SRAM), the non-volatility of flash, and the density of dynamic random access memory (DRAM). In addition, it should be low in cost and scalable to nanometer dimensions. Flash memories are currently used as non-volatile memory in stand-alone and embedded chips with great commercial success. However, flash does not qualify as an ideal memory, owing to its relatively long programming time (>10 is) and limited cycle endurance. Furthermore, the high programming voltages (>10 V) complicate scaling down to nanometer cell sizes.

Today's dominant solid-state memory technologies - SRAM, DRAM, and flash - have been around for a long time, with Flash the youngest, at 23 years. Their longevity can be explained in part by mutually beneficial differentiation. Each technology does a single thing very well, but many systems need all three memory types to deliver overall good performance at reasonable cost. However, the gain from differentiation comes at the cost of increased system and fabrication complexity, particularly in so-called embedded applications, where an entire electronic system is implemented on a single chip, with SRAM, DRAM and flash often used side by side.

All three technologies have advantages and disadvantages. SRAM has excellent read and write speeds, integrates readily into the process technology of embedded applications, and requires little power for data retention. However, its large cell size (a typical memory bit requires six transistors) makes it impractical for embedded applications that require a lot of memory. Embedded SRAM is used for cache memory in microprocessors, where high speed is more important than large amounts of memory.

DRAM uses a single transistor and a storage capacitor per cell, and thus it provides a denser architecture than SRAM, at the expense of increased embedded process complexity. Because the stored charge tends to leak out of the capacitor, DRAM requires constant power to refresh its bit state every few milliseconds. Because of its high power consumption, large amounts of DRAM are impractical for portable electronics with limited battery life.

In contrast to static and dynamic RAM, flash memory offers nonvolatile data storage; that is, its information is not lost when the power is turned off. Non-volatility is highly desirable in portable electronics, because nonvolatile data retention does not consume any battery power. Flash also has high density and moderately fast read access time, but its write mode is too slow and its write endurance far too limited for many applications. In addition, embedded flash needs its own high-voltage drivers, complicating the design and manufacturing process.

For some time, researchers have tried to devise non-volatile alternatives to flash. The goal is a "universal memory" that combines the best attributes of SRAM, DRAM, and flash. Such a memory would eliminate the need for multiple memories in many applications, would improve system performance and reliability by avoiding data transfer between multiple memories, and would reduce overall system cost

STUDY GOAL AND OBJECTIVES

The main reason for growing commitments to emerging non-volatile random access memory (NVRAM) is that scaling has now become a serious issue for the memory industry. Leakage is a major hurdle at 65nm and beyond. Three-dimensional structures offer one solution, but there is a limit on how far one can go in this technology. Similarly, SRAM makers have largely abandoned large 6T cells in portable devices in favor of 1T pseudo-SRAM (PSRAM). But again, this is only a holding action until something better comes along. Flash has a serious architectural scaling problem that seems likely to become critical well below 90nm. Such problems are making both semiconductor firms and OEMs take emerging memories much more seriously. Not only are many of these new technologies inherently more scalable, but also they seem well suited to the next generation of mobile computing and communications that will demand high capacity memories capable of storing and rapidly accessing video and large databases without overburdening battery power sources. In light of such issues, emerging memory solutions seem to be a key technology.

Ferroelectric RAM (FERAM or F-RAM), magnetic RAM (MRAM), and other next-generation technologies are all attempts to develop the "perfect" memory - one that is non-volatile and whose bits can be fully altered, with ultra-fast read and write rates and an infinite number of rewrite cycles. None of them succeeds in all areas, but all of them make key advancements in at least some of these important memory characteristics.

This study has identified and focused on seven emerging non-volatile memory technologies such as FERAM, phase change random access memory (PCM, PC-RAM, PRAM, OUM), magneto-resistive RAM (MRAM, STT RAM, Race Track Memory), resistance switching RAM (RRAM, ReRAM, CB-RAM, PMC-RAM, Nanobridge RAM CMOx, memistors), zero capacitor (ZRAM), quantum dot RAM and polymer printed memory.

This study focuses on emerging non-volatile random access memory products, providing market data about the size and growth of the application segments and new developments, including a detailed patent analysis, company profiles and industry trends. Another goal of this report is to provide a detailed and comprehensive multi-client study of the market in North America, Europe, Japan, China, India, Korea and the rest of the world (ROW) for potential future emerging non-volatile random access memory products and business opportunities.

The objectives include thorough coverage of the underlying economic issues driving the current solid-state memory business, as well as assessments of new, advanced emerging non-volatile random access memory products that companies are developing. Another important objective is to provide realistic market data and forecasts for emerging memory products. This study provides the most thorough and up-to-date assessment that can be found anywhere on the subject. It also provides extensive quantification of the many important facets of market developments in emerging non-volatile random access memory products in the world. This, in turn, contributes to the determination of what kinds of strategic responses companies might adopt in order to compete in this dynamic market.

REASONS FOR DOING THE STUDY

Memory design has seen a number of trends over the years. Process technology has steadily reduced its minimum feature size. A wide variety of techniques has been developed to improve packing-density. A myriad of technology/circuit/system optimizations have been created to improve performance and reduce power dissipation. In addition, emerging technologies such as three-dimensional (3D) chip stacking and new physical memory mechanisms are pushing the memory.

Recent market trends have indicated that commercialized or near-commercialized circuits are optimized across speed, density, power efficiency and manufacturability. Flash memory is not suited to all applications, having its own problems with random access time, bit alterability, and write cycling. With the increasing need to lower power consumption with zero-power standby systems, observers are predicting that the time has come for alternative technologies to capture at least some share in specific markets such as automotive smart airbags, high-end mobile phones, and RFID tags. An embedded non-volatile memory with superior performance to flash could see widespread adoption in system-on-chip (SoC) applications such as smart cards and microcontrollers.

These new emerging non-volatile random access memory products address the urgent need in some specific and small-form devices. Therefore, iRAP felt a need to do a detailed technology update and market analysis in this industry.

CONTRIBUTIONS OF THE STUDY

This study is intended to benefit existing and future manufacturers of solid-state memories who seek to expand revenues and market opportunities by moving into new technologies such as emerging non-volatile random access memory products which are positioned to become a preferred solution for many applications, such as automotive (e.g., smart airbags), industrial automation, transportation, harsh operating environments and extreme temperature range, instrumentation, medical equipment, industrial microcontrollers, radio frequency identification (RFID), electronic metering and radiation-hardened applications in consumer, military and aerospace markets.

The study also provides the most complete account currently available in a multi-client format of emerging non-volatile random access memory products growth in North America, Europe, Japan, China, and the rest of the world. This report provides the most thorough and up-to-date assessment that can be found anywhere on the subject. The study also provides an extensive quantification of the many important facets of market developments in emerging markets for new generation non-volatile random access memory products, especially in countries such as China

SCOPE AND FORMAT

The market data contained in this report quantify opportunities for emerging non-volatile random access memory products. In addition to product types, the report also covers many issues concerning the merits and future prospects of the emerging non-volatile random access memory products business, including corporate strategies, information technologies and the means for providing these highly advanced products and service offerings. It also covers in detail the economic and technological issues regarded by many as critical to the industry's current state of change. The report provides a review of the emerging non-volatile random access memory products industry and its structure, as well as the many companies involved in providing these products. The competitive positions of the main market players and the strategic options they face are also discussed, along with such competitive factors as marketing, distribution and operations.

TO WHOM THE STUDY CATERS

The study will benefit existing manufacturers of solid-state memory who seek to expand revenues and market opportunities by growing into the new technology of emerging non-volatile random access memory products, which are now positioned to become a preferred solution for many types of RFID tags, smart cards, high-end mobile phones, smart automotive airbags, etc.

Audiences for this study include marketing executives, business unit managers and other decision makers in solid-state memory companies themselves, as well as in companies peripheral to this business.

REPORT SUMMARY

Solid-state memories read and write data with great speed, enabling swift processing. High-performance versions, such as static and dynamic random access memory (SRAM and DRAM, respectively), use the electronic state of transistors and capacitors to store data bits. These chips lose their data, however, when the computer powers down - or crashes. Currently, solid-state memories constitute a market of over $50 billion, while the non-volatile segment is much smaller.

A few computers use non-volatile chips, which retain data when the power is off, as a solid-state drive in place of a hard disc drive (HDD). The now ubiquitous smart cell phones and other handheld devices also use non-volatile memory, but there is a trade-off between cost and performance. The cheapest non-volatile memory is flash memory, which, among other uses, is the basis of the little flash drives that people have hanging from their key rings. Flash memory, however, is slow and unreliable in comparison with other memory chips. Each time the high-voltage pulse (the "flash" of the name) writes a memory cell, the cell is damaged; it becomes unusable after only perhaps 10,000 writing operations. Nevertheless, because of its low cost, flash memory has become a dominant memory technology, particularly for applications in which the data will not be changed very often.

Industry estimates showed the DRAM market to be as much as $40 billion in 2010. However, the computing world is crying out for a memory chip with high data density that is also cheap, fast, reliable and non-volatile. With such a memory, computing devices would become much simpler and smaller, more reliable, faster and less energy consuming. Research groups around the world are investigating several approaches to meet this demand, including systems based on emerging non-volatile random access memory products.

Besides computers, today's portable electronics have become computationally intensive devices as the user interface has migrated to a fully multimedia experience. To provide the performance required for these applications, the portable electronics designer uses multiple types of memories: a medium-speed random access memory for continuously changing data, a high-speed memory for caching instructions to the CPU, and a slower, non-volatile memory for long-term information storage when the power is removed. Combining all of these memory types into a single memory has been a long-standing goal of the semiconductor industry.

It is highly likely that different alternatives are needed for different application segments of the markets, and a good match has to be found between solid-state memory product requirements and technology capabilities.

Seven emerging non-volatile memory technologies such as ferromagnetic RAM (FeRAM or F-RAM), phase change random access memory (PCM, PC-RAM, PRAM, OUM), magneto-resistive RAM (MRAM, STT RAM, race track memory), resistance switching RAM (RRAM, ReRAM, CB-RAM, PMC-RAM, nano-bridge RAM CMOx, memistors), zero capacitor (ZRAM), quantum dot RAM and polymer printed memory are poised as possible candidate to become the successor of flash memory. This is thanks to the improved performance in direct write, bit granularity, better endurance, read access time and write throughput.

Major findings of this report are:

• The 2010 global market for emerging non-volatile random access memory products was projected to have reached $115 million. This market will increase to $1,590 million by 2015 showing an average annual growth rate of 69% per year from 2010 to 2015.
• Of the six major regions surveyed for the period, North America captured about 42% of the market in 2010, followed by Europe at 36%, and the rest of the world (ROW) with 22%, dominated by Japan, Korea and China.
• The market for emerging non-volatile random access memory used as an embedded system on chip SOC cards in 2010 will be highest with more 50% of the market. This will be followed by distant market share for RFID tags used in goods which are transported by high-speed detection conveyors, smart airbags used in automobiles, radiation-hardened memory in aerospace and nuclear installations, printed memory platforms (such as smart cards, games, sensors, display, storage-class memory network) and high end smart mobile phones.
• Commercial uses of these new breeds of NV-RAM have been very slow to appear because of the rapid reduction of per-bit costs of conventional flash memory technologies already in the market. However, these new technologies are sure to capture some specific markets for lower power or zero stand-by system implementation as "green" technology grows.
• Among the seven emerging non-volatile random access memory technologies covered in this report, in 2010 the potential market for zero capacitor (ZRAM) is highest. The polymer printed memory market in 2010 will be next highest, followed by ferromagnetic RAM as a distant third.
• In 2015, phase change memory (PCM, PC-RAM, PRAM, OUM) will have the highest market share. FeRAM will be next highest, followed by zero capacitor RAM (ZRAM).
• MRAM promises a high capacity, next-generation memory that can replace SRAM/flash combos and battery-backed up RAM as well as supplying improved non-volatile memory solutions for high-end mobile products. MRAM is already in the sampling stage.

INTRODUCTION

STUDY GOAL AND OBJECTIVES

REASONS FOR DOING THE STUDY

CONTRIBUTIONS OF THE STUDY

SCOPE AND FORMAT

METHODOLOGY

INFORMATION SOURCES

TO WHOM THE STUDY CATERS

AUTHOR'S CREDENTIALS

EXECUTIVE SUMMARY

SUMMARY TABLE GLOBAL MARKET FOR EMERGING NON-VOLATILE RANDOM ACCESS MEMORY PRODUCTS BY REGION THROUGH 2015

SUMMARY FIGURE GLOBAL MARKET FOR EMERGING NON-VOLATILE RANDOM ACCESS MEMORY PRODUCTS BY REGION, 2010 AND 2015

INDUSTRY OVERVIEW

LEADING MANUFACTURERS

FIGURE 1 EMERGING NON-VOLATILE RANDOM ACCESS MEORY TECHNOLOGY SCENARIO IN 2010

TECHNOLOGY OVERVIEW

CURRENT NON-VOLATILE MEMORIES

EMERGING NVM

TYPES OF TECHNOLOGIES

TABLE 1 COMPARISON OF EMERGING NON-VOLATILE RANDOM ACCESS MEMORIES

TABLE 2 DEFINITIONS AND EXPLANATION OF TERMINOLOGIES APPLICABLE TO EMERGING NON-VOLATILE MEMORIES

EVOLUTION OF EMERGING NON-VOLATILE RANDOM ACCESS MEMORY TECHNOLOGIES

BACKGROUND OF SEMICONDUCTOR MEMORY

MEMORY USAGE AND APPLICATIONS

MEMORY MARKET SEGMENTS

NON-VOLATILE SEMICONDUCTOR MEMORY (NVSM)/STORAGE-CLASS MEMORY (SCM) VERSUS EMERGING NON-VOLATILE MEMORIES

EMERGING NON-VOLATILE MEMORY TECHNOLOGIES

ADVANTAGES OF EMERGING NVMS OVER CONVENTIONAL NVMS

FIGURE 2 FLOATING-GATE POLYSILICON (FLASH) ARCHITECTURE

DESCRIPTION OF EMERGING NON-VOLATILE RANDOM ACCESS MEMORIES

FERROMAGNETIC RANDOM ACCESS MEMORY (FERAM)

FIGURE 3 FERROELECTRIC CRYSTALS SHOWING MOBILE ATOM MOVING IN DIRECTION OF APPLIED FIELD SETTING A DIGITAL STATE-0

PHASE CHANGE RANDOM ACCESS MEMORY (PCRAM)

FIGURE 4 A VIEW OF PHASE CHANGE MEMORY

FIGURE 5 OPERATION OF PCRAM

FIGURE 6 SET AND RESET OPERATION IN PCM

CHARACTERISTICS

BENEFITS

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM)

DENSITY

POWER CONSUMPTION

SPEED

OVERALL

FIGURE 7 OPERATION OF MAGNETO-RESISTIVE RANDOM ACCESS MEMORY

RACETRACK MEMORY: A VARIANT OF MRAM

FIGURE 8 OPERATION OF RACETRACK RANDOM ACCESS MEMORY

COMPARISON TO OTHER MEMORY DEVICES

DEVELOPMENT DIFFICULTIES

RESISTIVE SWITCHING RANDOM ACCESS MEMORY (RRAM)

FIGURE 9 CONSTUCTION OF RESISTIVE RANDOM ACCESS MEMORY

RESISTIVE SWITCHING RANDOM ACCESS MEMORY (RRAM)

A VARIANT OF RRAM: PROGRAMMABLE METALLIZATION CELL (PMC)

CBRAM VERSUS RRAM

COMPARISONS

CURRENT STATUS

CMOX: A VARIANT OF RRAM

CONDUCTIVE METAL OXIDES

NANO-RAM: A VARIANT OF RRAM

FIGURE 10 ARCHITECTURE OF NANO RANDOM ACCESS MEMORY

ADVANTAGES OF NRAM

COMPARISON WITH OTHER PROPOSED SYSTEMS

MEMRISTORS: A VARIANT OF RRAM

ZERO CAPACITOR RANDOM ACCESS MEMORY

QUANTUM DOT RANDOM ACCESS MEMORY

POLYMER PRINTED MEMORY

FIGURE 11 A VIEW OF FERROELECTRIC POLYMER MEMORY

APPLICATIONS OF EMERGING NON-VOLATILE MEMORY PRODUCTS

STORAGE-CLASS MEMORY

COMPUTE-CENTRIC WORKLOADS

DATA-CENTRIC WORKLOADS

TABLE 3 STORAGE-CLASS MEMORY V/S DISK MEMORY REQUIREMENT FORECAST IN 2020

SMART AIRBAGS

RADIATION-HARDENED MEMORY APPLICATIONS

RADIO-FREQUENCY IDENTIFICATION (RFID)

SMART MOBILE PHONES

PRINTED MEMORY PLATFORMS

EMBEDDED MEMORY

FIGURE 12 EMERGING MEMORY MANUFACTURING TECHNOLOGY AND CONVENTIONAL CMOS TECHNOLOGY

ORGANIC SWITCHING MATERIALS

INDUSTRY STRUCTURE AND MARKETS

TABLE 4 NON-VOLATILE EMERGING MEMORIES MANUFACTURERS, MATERIAL SUPPLIERS, END USERS AND SYSTEM INTEGRATORS

PARTNERSHIPS AND CONSOLIDATIONS

TABLE 5 ACQUISITIONS, MERGERS AND PARTNERSHIPS IN EMERGING NON-VOLATILE MEMORIES

PRICE STRUCTURE

TABLE 6 COMMERCIALLY AVAILABLE NON-VOLATILE EMERGING MEMORY CHIPS IN 2010

GLOBAL MARKET AND REGIONAL SHARES

MARKET ACCORDING TO APPLICATIONS

TABLE 7 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY APPLICATION THROUGH 2015

FIGURE 13 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY APPLICATION THROUGH 2015

MARKET BY TECHNOLOGY

TABLE 8 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY TECHNOLOGIES ADOPTED THROUGH 2015

FIGURE 14 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY TECHNOLOGIES ADOPTED IN 2010

REGIONAL MARKETS

TABLE 9 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY REGION THROUGH 2015

FIGURE 15 GLOBAL MARKET FOR EMERGING NVRAM PRODUCTS BY REGION THROUGH 2015

PATENTS AND PATENT ANALYSIS

LIST OF PATENTS

PHASE CHANGE RANDOM ACCESS MEMORY DEVICES AND METHODS OF OPERATING THE SAME

METHODS FOR FABRICATING PHASE CHANGEABLE MEMORY DEVICES

PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE

NON-VOLATILE MEMORY INCLUDING SUB-CELL ARRAY AND METHOD OF WRITING DATA THERETO

MEMORY CELL DEVICE AND PROGRAMMING METHODS

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND RELATED METHODS OF OPERATION

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES

MEMORY CELL WITH MEMORY MATERIAL INSULATION AND MANUFACTURING METHOD

MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY

MULTILAYER STORAGE CLASS MEMORY USING EXTERNALLY HEATED PHASE CHANGE MATERIAL

MAGNETIC RAM

PHASE CHANGE MEMORY CELL AND MANUFACTURING METHOD

VACUUM-JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT

METHOD FOR MAKING A KEYHOLE OPENING DURING THE MANUFACTURE OF A MEMORY CELL

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

METHOD FOR READING NON-VOLATILE FERROELECTRIC CAPACITOR MEMORY CELL

RESISTANCE MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY

RESISTANCE MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY

METHOD TO IMPROVE FERROELECTRONIC MEMORY PERFORMANCE AND RELIABILITY

MULTI-PORT PHASE CHANGE RANDOM ACCESS MEMORY CELL AND MULTI-PORT PHASE CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE SAME

MEMORY CELL HAVING A SIDE ELECTRODE CONTACT

MAGNETIC MEMORIES UTILIZING A MAGNETIC ELEMENT HAVING AN ENGINEERED FREE LAYER

PROGRAMMABLE LOGIC DEVICE STRUCTURE USING THIRD DIMENSIONAL MEMORY

2T/2C FERROELECTRIC RANDOM ACCESS MEMORY WITH COMPLEMENTARY BIT-LINE LOADS

NON-VOLATILE FERROELECTRIC MEMORY

FIELD PROGRAMMABLE GATE ARRAYS USING RESISTIVITY SENSITIVE MEMORIES

BUFFERING SYSTEMS FOR ACCESSING MULTIPLE LAYERS OF MEMORY IN INTEGRATED CIRCUITS

PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS

THIN-FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION PAD AND MANUFACTURING METHOD

METHOD OF WRITING INTO SEMICONDUCTOR MEMORY DEVICE

PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING

THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD

PHASE CHANGE RANDOM ACCESS MEMORY (PRAM) DEVICE

PHASE CHANGE MEMORY DYNAMIC RESISTANCE TEST AND MANUFACTURING METHODS

METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL

I-SHAPED PHASE CHANGE MEMORY CELL

MULTI-RESISTIVE STATE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES

PLANAR THIRD DIMENSIONAL MEMORY WITH MULTI-PORT ACCESS

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND ITS WRITE CONTROL METHOD

METHODS AND SYSTEMS FOR ACCESSING MEMORY

SPACE AND PROCESS EFFICIENT MRAM AND METHOD

OPTIMIZED PHASE CHANGE WRITE METHOD

PHASE-CHANGE RANDOM ACCESS MEMORY AND PROGRAMMING METHOD

MEMORY DEVICE, IN PARTICULAR PHASE CHANGE RANDOM ACCESS MEMORY DEVICE WITH TRANSISTOR, AND METHOD FOR FABRICATING A MEMORY DEVICE

MEMORY POWER MANAGEMENT

MULTI-STEP SELECTIVE ETCHING FOR CROSS-POINT MEMORY

RESISTIVE RANDOM ACCESS MEMORY DEVICE

MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD

PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP

BRIDGE RESISTANCE RANDOM ACCESS MEMORY DEVICE WITH A SINGULAR CONTACT STRUCTURE

SIDE WALL ACTIVE PIN MEMORY AND MANUFACTURING METHOD

MEMORY ARCHITECTURE AND CELL DESIGN EMPLOYING TWO ACCESS TRANSISTORS

MANUFACTURING METHOD FOR PHASE CHANGE RAM WITH ELECTRODE LAYER PROCESS

MEMORY CELL DEVICE AND MANUFACTURING METHOD

THIN-FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD

METHODS AND APPARATUS FOR A DUAL-METAL MAGNETIC SHIELD STRUCTURE

PROGRAMMABLE RESISTIVE RAM AND MANUFACTURING METHOD

MEMORY EMULATION USING RESISTIVITY-SENSITIVE MEMORY

METHODS OF OPERATING A BI-STABLE RESISTANCE RANDOM ACCESS MEMORY WITH MULTIPLE MEMORY LAYERS AND MULTILEVEL MEMORY STATES

COMPOSITIONS FOR REMOVAL OF PROCESSING BY-PRODUCTS AND METHOD FOR USING SAME

THIN-FILM FUSE PHASE CHANGE RAM AND MANUFACTURING METHOD

PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD OF TESTING THE SAME

PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM) PERFORMING PROGRAM LOOP OPERATION AND METHOD OF PROGRAMMING THE SAME

PHASE CHANGE MATERIALS, PHASE CHANGE RANDOM ACCESS MEMORIES HAVING THE SAME AND METHODS OF OPERATING PHASE CHANGE RANDOM ACCESS MEMORIES

PHASE-CHANGE MEMORY DEVICE INCLUDING NANOWIRES AND METHOD OF MANUFACTURING THE SAME

MEMORY CELL SIDEWALL CONTACTING SIDE ELECTRODE

FERROELECTRIC MEMORY ARRAY FOR IMPLEMENTING A ZERO CANCELLATION SCHEME TO REDUCE PLATELINE VOLTAGE IN FERROELECTRIC MEMORY

PROGRAMMABLE RESISTIVE RAM AND MANUFACTURING METHOD

METHOD OF CONTROLLING THE RESISTANCE IN A VARIABLE RESISTIVE ELEMENT AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE AND MANUFACTURING METHOD

PROGRAMMABLE RESISTIVE MEMORY WITH DIODE STRUCTURE

PHASE CHANGE RANDOM ACCESS MEMORY

MRAM READ BIT WITH ASKEW FIXED LAYER

RESISTIVE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SCALEABLE MEMORY SYSTEMS USING THIRD DIMENSION MEMORY

MEMORY USING VARIABLE TUNNEL BARRIER WIDTHS

TOGGLE MEMORY BURST

MAGNETIC TUNNEL JUNCTION WITH ENHANCED MAGNETIC SWITCHING CHARACTERISTICS

METHOD TO TIGHTEN SET DISTRIBUTION FOR PCRAM

PHASE CHANGE RANDOM ACCESS MEMORY AND RELATED METHODS OF OPERATION

DAMASCENE PHASE CHANGE RAM AND MANUFACTURING METHOD

METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE RESISTANCE MEMORY ARRAY

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

CONDUCTIVE MEMORY STACK WITH SIDEWALL

METHOD FOR MANUFACTURING A RESISTOR RANDOM ACCESS MEMORY WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS

SERIAL MEMORY INTERFACE

FERROELECTRIC RANDOM ACCESS MEMORIES (FRAMS) HAVING LOWER ELECTRODES RESPECTIVELY SELF-ALIGNED TO NODE CONDUCTIVE LAYER PATTERNS AND METHODS OF FORMING THE SAME

SURFACE TOPOLOGY IMPROVEMENT METHOD FOR PLUG SURFACE AREAS

GE PRECURSOR, GST THIN LAYER FORMED USING THE SAME, PHASE-CHANGE MEMORY DEVICE INCLUDING THE GST THIN LAYER, AND METHOD OF MANUFACTURING THE GST THIN LAYER

HARDMASK FOR FORMING FERROELECTRIC CAPACITORS IN A SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME

CURRENT COMPLIANT SENSING ARCHITECTURE FOR MULTILEVEL PHASE CHANGE MEMORY

METHOD FOR MANUFACTURING A NARROW STRUCTURE ON AN INTEGRATED CIRCUIT

THIN-FILM PLATE PHASE CHANGE RAM CIRCUIT AND MANUFACTURING METHOD

MANUFACTURING METHODS FOR THIN-FILM FUSE PHASE CHANGE RAM

METHOD FOR MAKING MEMORY CELL DEVICE

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA WRITING METHOD

THERMAL ISOLATION FOR AN ACTIVE-SIDEWALL PHASE CHANGE MEMORY CELL

METHOD AND STRUCTURE FOR IMPROVED ALIGNMENT IN MRAM INTEGRATION

METHOD FOR SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT

MEMORY CELL DEVICE WITH CIRCUMFERENTIALLY-EXTENDING MEMORY ELEMENT

PHASE CHANGE MATERIALS AND ASSOCIATED MEMORY DEVICES

NONVOLATILE MEMORY WITH DATA CLEARING FUNCTIONALITY

PHASE-CHANGE RANDOM ACCESS MEMORY EMPLOYING READ BEFORE WRITE FOR RESISTANCE STABILIZATION

MEMORY DEVICES HAVING SHARP-TIPPED PHASE CHANGE LAYER PATTERNS

METHOD AND APPARATUS FOR REFRESHING PROGRAMMABLE RESISTIVE MEMORY

MEMORY CELL WITH SEPARATE READ AND PROGRAM PATHS

VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND METHOD OF DRIVING THE SAME

METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL

TWO-ELEMENT MAGNETIC MEMORY CELL

METHOD FOR PRODUCTION OF MRAM ELEMENTS

THERMALLY INSULATED PHASE CHANGE MEMORY DEVICE

MULTI-STATE MAGNETORESISTANCE RANDOM ACCESS CELL WITH IMPROVED MEMORY STORAGE DENSITY

MEMORY ELEMENT WITH REDUCED-CURRENT PHASE CHANGE ELEMENT

PHASE CHANGE MEMORY CELL AND MANUFACTURING METHOD

TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS

PHASE CHANGE RANDOM ACCESS MEMORY (PRAM) DEVICE HAVING VARIABLE DRIVE VOLTAGES

VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT

PHASE CHANGE MEMORY DEVICE AND MANUFACTURING METHOD

SELF-ALIGNED STRUCTURE AND METHOD FOR CONFINING A MELTING POINT IN A RESISTOR RANDOM ACCESS MEMORY

WRITE DRIVER CIRCUIT FOR CONTROLLING A WRITE CURRENT APPLIED TO A PHASE CHANGE MEMORY BASED ON AN AMBIENT TEMPERATURE

METHOD FOR TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT

CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF OPERATING THE SAME

METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR STEPPED RESET PROGRAMMING PROCESS ON PROGRAMMABLE RESISTIVE MEMORY CELL

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR READ BEFORE PROGRAMMING PROCESS ON MULTIPLE PROGRAMMABLE RESISTIVE MEMORY CELL

VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS

SINGLE-MASK PHASE CHANGE MEMORY ELEMENT

SELF-ALIGNED MANUFACTURING METHOD, AND MANUFACTURING METHOD FOR THIN-FILM FUSE PHASE CHANGE RAM

FERROELECTRIC RANDOM ACCESS MEMORY

PHASE CHANGE MEMORY HAVING MULTILAYER THERMAL INSULATION

SPACER ELECTRODE SMALL PIN PHASE CHANGE MEMORY RAM AND MANUFACTURING METHOD

SEMICONDUCTOR STORAGE DEVICE

MEMORY WRITE CIRCUIT

RESISTANCE RANDOM ACCESS MEMORY DEVICES AND METHOD OF FABRICATION

CONDUCTIVE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES

MAGNETIC DEVICES AND TECHNIQUES FOR FORMATION THEREOF

RESISTIVE MEMORY DEVICE

PIPE SHAPED PHASE CHANGE MEMORY

MULTI-RESISTIVE STATE ELEMENT WITH REACTIVE METAL

THERMALLY CONTAINED/INSULATED PHASE CHANGE MEMORY DEVICE AND METHOD (COMBINED)

METHODS OF OPERATING A BISTABLE RESISTANCE RANDOM ACCESS MEMORY WITH MULTIPLE MEMORY LAYERS AND MULTILEVEL MEMORY STATES

SPACER CHALCOGENIDE MEMORY DEVICE

TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS

METHOD OF MAKING THREE-DIMENSIONAL, 2R MEMORY HAVING A 4F2 CELL SIZE RRAM

SENSING A SIGNAL IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

FERROELECTRIC RANDOM ACCESS MEMORY CIRCUITS FOR GUARDING AGAINST OPERATION WITH OUT-OF-RANGE VOLTAGES AND METHODS OF OPERATING SAME

FERROELECTRIC RANDOM ACCESS MEMORIES (FRAMS) HAVING LOWER ELECTRODES RESPECTIVELY SELF-ALIGNED TO NODE CONDUCTIVE LAYER PATTERNS AND METHODS OF FORMING THE SAME

TWO-CYCLE SENSING IN A TWO-TERMINAL MEMORY ARRAY HAVING LEAKAGE CURRENT

FERROELECTRIC RANDOM ACCESS MEMORY CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

STRAIN CONTROL OF EPITAXIAL OXIDE FILMS USING VIRTUAL SUBSTRATES

SEPARATE WRITE AND READ ACCESS ARCHITECTURE FOR A MAGNETIC TUNNEL JUNCTION

FERROELECTRIC CAPACITOR WITH PARALLEL RESISTANCE FOR FERROELECTRIC MEMORY

APPARATUS FOR PULSE TESTING A MRAM DEVICE AND METHOD THEREFORE

ENHANCED FUNCTIONALITY IN A TWO-TERMINAL MEMORY ARRAY

LOW POWER MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENTS

STORAGE CONTROLLER FOR MULTIPLE CONFIGURATIONS OF VERTICAL MEMORY

RESISTIVE MEMORY DEVICE WITH A TREATED INTERFACE

PROVIDING A REFERENCE VOLTAGE TO A CROSS POINT MEMORY ARRAY

INITIALIZING PHASE CHANGE MEMORIES

PHASE CHANGE RANDOM ACCESS MEMORY, BOOSTING CHARGE PUMP AND METHOD OF GENERATING WRITE DRIVING VOLTAGE

THIN-FILM FUSE PHASE CHANGE RAM AND MANUFACTURING METHOD

CONTROL OF SET/RESET PULSE IN RESPONSE TO PERIPHERAL TEMPERATURE IN PRAM DEVICE

FERROELECTRIC MEMORY DEVICES HAVING A PLATE LINE CONTROL CIRCUIT

LASER ANNEALING OF COMPLEX METAL OXIDES (CMO) MEMORY MATERIALS FOR NON-VOLATILE MEMORY INTEGRATED CIRCUITS

READ BIAS SCHEME FOR PHASE CHANGE MEMORIES

FERROELECTRIC MEMORY WITH WIDE OPERATING VOLTAGE AND MULTI-BIT STORAGE PER CELL

CIRCUITS FOR DRIVING FRAM

FERROELECTRIC RANDOM ACCESS MEMORY

INTEGRATED CIRCUIT HAVING A RESISTIVE MEMORY

SERIAL TRANSISTOR-CELL ARRAY ARCHITECTURE

PHASE CHANGE RANDOM ACCESS MEMORY DEVICE HAVING VARIABLE DRIVE VOLTAGE CIRCUIT

CHAIN FERROELECTRIC RANDOM ACCESS MEMORY (CFRAM) HAVING AN INTRINSIC TRANSISTOR CONNECTED IN PARALLEL WITH A FERROELECTRIC CAPACITOR

MAGNETIC FILM STRUCTURE USING SPIN CHARGE, A METHOD OF MANUFACTURING THE SAME, A SEMICONDUCTOR DEVICE HAVING THE SAME, AND A METHOD OF OPERATING THE SEMICONDUCTOR DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY SIMULATION

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

MRAM READ SEQUENCE USING CANTED BIT MAGNETIZATION

NONVOLATILE MEMORY SYSTEM USING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM)

THIN-FILM PLATE PHASE CHANGE RAM CIRCUIT AND MANUFACTURING METHOD

CROSS-POINT RRAM MEMORY ARRAY HAVING LOW BIT LINE CROSSTALK

DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT AND MEMORY DEVICE

TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS

CROSS-POINT MEMORY ARRAY WITH FAST ACCESS TIME

PHASE CHANGE RANDOM ACCESS MEMORY (PRAM) DEVICE

MAGNETIC ELEMENT UTILIZING SPIN-TRANSFER AND HALF-METALS AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT

SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY

FERROELECTRIC CAPACITOR STACK ETCH CLEANING METHODS

METHOD FOR MANUFACTURING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR DRIVING THE SAME

SELF-ALIGNED SMALL CONTACT PHASE-CHANGE MEMORY METHOD AND DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF PATTERNING A MAGNETIC TUNNEL JUNCTION STACK FOR A MAGNETO-RESISTIVE RANDOM ACCESS MEMORY

CHEMICAL MECHANICAL POLISH OF PCMO THIN-FILMS FOR RRAM APPLICATIONS

MRAM MEMORY WITH RESIDUAL WRITE FIELD RESET

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY AND DRIVING METHOD THEREOF

PLATELINE VOLTAGE PULSING TO REDUCE STORAGE NODE DISTURBANCE IN FERROELECTRIC MEMORY

SEMICONDUCTOR MEMORY DEVICE HAVING REDUNDANCY CELL ARRAY SHARED BY A PLURALITY OF MEMORY CELL ARRAYS

METHOD FOR PRODUCTION OF MRAM ELEMENTS

CONDUCTIVE MEMORY STACK WITH SIDEWALL

MAGNETIC SWITCHING WITH EXPANDED HARD-AXIS MAGNETIZATION VOLUME AT MAGNETO-RESISTIVE BIT ENDS

METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES

FERROELECTRIC CAPACITOR HYDROGEN BARRIERS AND METHODS FOR FABRICATING THE SAME

ETCH-STOP MATERIAL FOR IMPROVED MANUFACTURE OF MAGNETIC DEVICES

BIT END DESIGN FOR PSEUDO SPIN VALVE (PSV) DEVICES

FERROELECTRIC CAPACITOR WITH PARALLEL RESISTANCE FOR FERROELECTRIC MEMORY

ONE-MASK PT/PCMO/PT STACK ETCHING PROCESS FOR RRAM APPLICATIONS

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

DEVICE AND METHOD FOR GENERATING REFERENCE VOLTAGE IN FERROELECTRIC RANDOM ACCESS MEMORY (FRAM)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA

LINE DRIVER THAT FITS WITHIN A SPECIFIED LINE PITCH

METHOD OF SUBSTRATE SURFACE TREATMENT FOR RRAM THIN-FILM DEPOSITION

TRIPLE PULSE METHOD FOR MRAM TOGGLE BIT CHARACTERIZATION

FERROELECTRIC CAPACITOR HAVING A SUBSTANTIALLY PLANAR DIELECTRIC LAYER AND A METHOD OF MANUFACTURE THEREFOR

MRAM ARCHITECTURE WITH ELECTRICALLY ISOLATED READ AND WRITE CIRCUITRY

MEMORY ARRAY OF A NON-VOLATILE RAM

PROVIDING A REFERENCE VOLTAGE TO A CROSS POINT MEMORY ARRAY

FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

SERIAL TRANSISTOR-CELL ARRAY ARCHITECTURE

METHODS FOR FABRICATING A MAGNETIC KEEPER FOR A MEMORY DEVICE

METHOD AND APPARATUS TO REDUCE STORAGE NODE DISTURBANCE IN FERROELECTRIC MEMORY

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICE STRUCTURES AND METHODS FOR FABRICATING THE SAME

NON-VOLATILE MEMORY WITH A SINGLE TRANSISTOR AND RESISTIVE MEMORY ELEMENT

REFERENCE VOLTAGE GENERATING APPARATUS FOR USE IN A FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) AND A DRIVING METHOD THEREFOR PATENT NO.: US7095643

ARCHITECTURES FOR CPP RING SHAPED (RS) DEVICES

CONDUCTIVE MEMORY ARRAY HAVING PAGE MODE AND BURST MODE WRITE CAPABILITY

RE-WRITABLE MEMORY WITH MULTIPLE MEMORY LAYERS

MULTI-STATE MAGNETO-RESISTANCE RANDOM ACCESS CELL WITH IMPROVED MEMORY STORAGE DENSITY

FERROELECTRIC MEMORY DEVICE

SPIN BARRIER ENHANCED MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY USING THE SAME

MULTI-RESISTIVE STATE ELEMENT WITH REACTIVE METAL

LAYOUT OF DRIVER SETS IN A CROSS-POINT MEMORY ARRAY

CIRCUIT AND METHOD FOR REDUCING FATIGUE IN FERROELECTRIC MEMORIES

METHOD AND APPARATUS FOR SIMULATING A MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM)

TWO-TERMINAL MEMORY ARRAY HAVING REFERENCE CELLS

FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND CONTROL METHOD THEREOF

MULTI-RESISTIVE STATE MATERIAL THAT USES DOPANTS

CONDUCTIVE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES

PCMO THIN-FILM WITH RESISTANCE RANDOM ACCESS MEMORY (RRAM) CHARACTERISTICS

SEMICONDUCTOR STORAGE DEVICE

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

LOW TEMPERATURE DEPOSITION OF COMPLEX METAL OXIDES (CMO) MEMORY MATERIALS FOR NON-VOLATILE MEMORY INTEGRATED CIRCUITS

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

FERROELECTRIC MEMORY WITH AN INTRINSIC ACCESS TRANSISTOR COUPLED TO A CAPACITOR

ADAPTIVE PROGRAMMING TECHNIQUE FOR A RE-WRITABLE CONDUCTIVE MEMORY DEVICE

CROSS-POINT MEMORY ARCHITECTURE WITH IMPROVED SELECTIVITY

METHOD FOR FABRICATING FERROELECTRIC RANDOM ACCESS MEMORY DEVICE

BIAS-ADJUSTED MAGNETO-RESISTIVE DEVICES FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) APPLICATIONS

MEMORY ARRAY WITH HIGH TEMPERATURE WIRING

SPACER CHALCOGENIDE MEMORY METHOD

METHOD OF AFFECTING RRAM CHARACTERISTICS BY DOPING PCMO THIN-FILMS

MRAM DEVICE INTEGRATED WITH OTHER TYPES OF CIRCUITRY

EPIR DEVICE AND SEMICONDUCTOR DEVICES UTILIZING THE SAME

TUNNELING ANISOTROPIC MAGNETO-RESISTIVE DEVICE AND METHOD OF OPERATION

PSEUDO TUNNEL JUNCTION

TERMINAL TRAPPED CHARGE MEMORY DEVICE WITH VOLTAGE SWITCHABLE MULTI-LEVEL RESISTANCE

DISCHARGE OF CONDUCTIVE ARRAY LINES IN FAST MEMORY

CROSS-POINT ARRAY USING DISTINCT VOLTAGES

LOW SILICON-HYDROGEN SIN LAYER TO INHIBIT HYDROGEN-RELATED DEGRADATION IN SEMICONDUCTOR DEVICES HAVING FERROELECTRIC COMPONENTS

COMPOSITIONS FOR REMOVAL OF PROCESSING BY-PRODUCTS AND METHOD FOR USING SAME

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HIGH SELECTIVITY

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY

LINE DRIVERS THAT USE MINIMAL METAL LAYERS

CONDUCTIVE MEMORY STACK WITH NON-UNIFORM WIDTH

ZERO CANCELLATION SCHEME TO REDUCE PLATELINE VOLTAGE IN FERROELECTRIC MEMORY

3D RRAM

MRAM STORAGE DEVICE

METHOD OF FORMING AND USING A HARDMASK FOR FORMING FERROELECTRIC CAPACITORS IN A SEMICONDUCTOR DEVICE

HYDROGEN-LESS CVD TIN PROCESS FOR FERAM VIA0 BARRIER APPLICATION

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF

CROSS-POINT MEMORY ARRAY EXHIBITING A CHARACTERISTIC HYSTERESIS

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, AND PROGRAMMING METHOD AND ERASING METHOD THEREOF

SERIES CONNECTED TC UNIT TYPE FERROELECTRIC RAM AND TEST METHOD THEREOF

HYDROGEN BARRIER FOR PROTECTING FERROELECTRIC CAPACITORS IN A SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME

BRIDGE-TYPE MAGNETIC RANDOM ACCESS MEMORY (MRAM) LATCH

METHOD FOR READING A PASSIVE MATRIX-ADDRESSABLE DEVICE AND A DEVICE FOR PERFORMING THE METHOD

FERROELECTRIC CAPACITOR HYDROGEN BARRIERS AND METHODS FOR FABRICATING THE SAME

PATENT ANALYSIS

TABLE 10 NUMBER OF U.S. PATENTS GRANTED TO COMPANIES FOR NON-VOLATILE EMERGING MEMORY TECHNOLOGIES FROM 2006 THROUGH APRIL 2010

FIGURE 16 NUMBER OF U.S. PATENTS GRANTED TO COMPANIES FOR NON-VOLATILE EMERGING MEMORY TECHNOLOGIES FROM 2006 THROUGH APRIL 2010

INTERNATIONAL OVERVIEW OF U.S. PATENT ACTIVITY IN EMERGING NON-VOLATILE RANDOM ACCESS MEMORY

TABLE 11 NUMBER OF U.S. PATENTS GRANTED TO COMPANIES FOR NON-VOLATILE EMERGING MEMORY PRODUCTS BY REGION FROM 2006 THROUGH APRIL 2010

COMPANY PROFILES

4DS, INC.

ADESTO TEHNOLOGIES

ADVANCED MATERIALS INNOVATION CENTER (AMIC)

BAE SYSTEMS PLC

CROCUS TECHNOLOGY

CYPRESS SEMICONDUCTOR CORPORATION

ELPIDA MEMORY, INC.

EVERSPIN TECHNOLOGIES, INC.

FUJITSU COMPONENTS AMERICA, INC.

GRANDIS, INC.

HEWLETT-PACKARD COMPANY

HONEYWELL INTERNATIONAL INC.

HYNIX SEMICONDUCTOR AMERICA INC.

INTERNATIONAL BUSINESS MACHINES (IBM) CORPORATION

IM FLASH TECHNOLOGIES, LLC

IMEC BELGIUM

INFINEON TECHNOLOGIES AG

INNOVATIVE SILICON, INC.

INTEL CORPORATION

MACRONIX INTERNATIONAL CO., LTD.

MATSUSHITA ELECTRIC INDUSTRIAL CORPORATION (PANASONIC)

MICROMEM TECHNOLOGIES INC.

MICRON TECHNOLOGY, INC.

MOSYS, INC

NETRINO, LLC

NANTERO, INC.

NUMONYX

NVE CORPORATION

OVONYX, INC.

QS SEMICONDUCTOR CORP.

RAMTRON INTERNATIONAL CORPORATION

RENESAS ELECTRONICS CORPORATION (HITACHI)

SAMSUNG SEMICONDUCTOR

SHARP LABORATORIES OF AMERICA

ST MICROELECTRONICS

SYMETRIX CORPORATION

TEXAS INSTRUMENTS INC.

THIN FILM ELECTRONICS AB

TOSHIBA

UNITY SEMICONDUCTOR CORPORATION

ANNEXURE A

EXPLANATIONS OF TERMINOLOGIES APPLICABLE TO CONVENTIONAL NON-VOLATILE RANDOM ACCESS MEMORY (RAM)

PROM

EPROM

EEPROM

DRAM

DRAM ISSUES

SRAM

NVSRAM

To order this report:

: Advanced Solid-state Memory Systems And Products: Emerging Non-volatile Memory Technologies, Industry Trends And Market Analysis

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