Microsemi's New SiC Schottky Diodes Improve Electrical Power Conversion Efficiency

ALISO VIEJO, Calif., Nov. 15, 2012 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today introduced a new family of 1200 volt (V) Schottky diodes based on silicon carbide (SiC) material and technology. The new diodes are targeted at a wide range of industrial applications including solar inverters, welding, plasma cutters, fast vehicle charging, oil exploration, and other high power, high voltage applications where power density, higher performance and reliability are important.

(Logo: http://photos.prnewswire.com/prnh/20110909/MM66070LOGO)

SiC offers a number of benefits compared to silicon material (Si) including a higher breakdown field strength and improved thermal conductivity. These attributes allow designers to create devices with better performance characteristics encompassing zero reverse recovery, temperature independent behavior, higher voltage capability, and higher temperature operation to achieve new levels of performance, efficiency and reliability.

In addition to the inherent benefits of the device, Microsemi is the only manufacturer to offer a SiC Schottky diode in a large surface mount backside solderable D³ package allowing designers to achieve increased power density and lower manufacturing costs.

"We applied our more than 25 years of power semiconductor device design and manufacturing know-how to deliver a family of SiC diodes that offers unparalleled levels of performance, reliability and overall quality," said Russell Crecraft, general manager of Microsemi's Power Products Group. "Next-generation power conversion systems require higher power densities, higher operating frequencies and higher efficiencies—and our new silicon carbide devices help system designers meet those needs."

The new 1200V SiC Schottky diode product portfolio includes:

• APT10SCD120BCT (1200V, 10A, common cathode TO-247 package)
• APT20SCD120B (1200V, 20A, TO-247 package)
• APT30SCD120B (1200V, 30A, TO-247 package)
• APT20SCD120S (1200V, 20A, D³ package)
• APT30SCD120S (1200V, 30A, D³ package)

Microsemi's new SiC Schottky diodes are in production now. For more information, or to obtain a sample, please contact your local distributor or Microsemi sales representative.

About Microsemi

Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its new family of 1200 volt Schottky diodes based on silicon carbide material and technology, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.

SOURCE Microsemi Corporation

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