Intersil Extends Leading Radiation Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications

Intersil will couple its radiation hardened FET drivers with GaN FETs to deliver performance that leapfrogs existing products that rely on traditional high-rel FET technologies. GaN provides better conductivity and switching characteristics that enable several system benefits, including a reduction in system power losses.

"Intersil has decades of experience developing state-of-the-art radiation tolerant devices and a long heritage supplying space flight applications," said Philip Chesley, senior vice president of Precision Products at Intersil. "When combined with the demonstrated ability of GaN devices to operate reliably under harsh environmental conditions, we will provide customers with a far superior alternative to existing FET technology."

Intersil is collaborating with Efficient Power Conversion Corporation (EPC), the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN^®) FETs as power MOSFET replacements, and a leading provider of enhancement-mode gallium nitride power transistors. Intersil's new products based on the eGaN technology will be sampling this summer.

About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics, enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including industrial and infrastructure, mobile computing, automotive and aerospace. For more information about Intersil, visit our website at www.intersil.com.

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