Toshiba - TL1F1-LW1 Technology Analysis

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Mar 13, 2014, 07:00 ET

DUBLIN, Ireland, March 13, 2014 /PRNewswire/ --

Research and Markets (http://www.researchandmarkets.com/research/bfqmpt/toshiba) has announced the addition of the "Toshiba - TL1F1-LW1 Technology Analysis" report to their offering.
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The First GaN On Silicon Led By Toshiba On The Market
New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure

Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.

The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding
process without gold.

Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.

A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.

The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing report is also available.

Key Topics Covered:

Physical Analysis
Physical Analysis Methodology- Package Views & Dimension- Package Opening
Package X-Ray
Package Cross-Section
Phosphor
Protective diode
LED Views & Dimensions
Cathode
Anode
Epitaxy
LED Thickness
LED Characteristics
Manufacturing Process Flow
Global Overview
LED Fabrication Unit
LED Process Flow
Package Fabrication Unit
Package Process Flow

For more information visit http://www.researchandmarkets.com/research/bfqmpt/toshiba

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